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 GaN-SiC Pallet Amplifier
Product Features
* Doherty amplifier design * GaN on SiC HEMT * Small and light weight * 50 Ohm Input/Output impedance matched * Highly reliable and rugged design * High efficiency, High Gain * 8W typical PAVG
RTP26010-S0
Application
* WiMAX DPD amplifier * General purpose RF amplifier
Description
The RTP26010-S0 is designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency. The RTP26010-S0 is DPD application amplifier.
Electrical Specifications @ VDD=+30VDC, T=25C, 50
System PARAMETER
Frequency Range Output Power Output Power @ Psat G.C.P Small Signal Gain Small Signal Gain Flatness Gain Variation ACLR @ WiMAX 10MHz 2FA Input VSWR Forward Coupling Operating Voltage Efficiency @ Pout 10Watt
Symbol
BW PAVG Psat SSG G Gt ACLR S11 FC VDC E
Min
2496 45 -
Typ
8 50 1.0 3.0 -25dBr
Max
2690 10 2
Unit
MHz Watt Watt dB dB dB dBr
28
1.5:1 -30 30 30
1.7:1 -
dB Volt %
Test Signal Condition : WCDMA 4FA
Environmental Characteristics
PARAMETER
Operating Temperature Storage Temperature
Symbol
Tc Ts
Min
-20 -30
Typ
-
Max
+50 +60
Unit
C C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H ) RF Connectors In/Out RF Connector Coupling DC Connectors / Controls Cooling Value 150 x 90 x 18.5 SMA Female MCX Female Main 4Pin, Sub 6Pin External Heat sink + airflow Units mm Limits Max
Tel : 82-31-250-5011 rfsales@rfhic.com
All specifications may change without notice. Version 0.3
GaN-SiC Pallet Amplifier
RF Interface Connectors
Pin # 1 2 3 RF IN RF OUT RF FWD Port Description
RTP26010-S0
Specifications RF Input signal from TRx B'd RF Output signal to TDD switch RF Forward Detection signal For Feed-back
Main DC Connector
Pin # 1,2 3,4 Description Drive, Main Amp Stage +Vdd GND +28V ~ +48V Ground Specifications
Sub DC Connector
Pin # 1, 2 3, 4 5 6 Description Gain Block Amp Stage +Vgg GND TDD Signal Temp. Monitor +5V Ground PA TDD control signal for switching gate bias Reporting Temperature data [0.75V/25(10mV/)] Specifications
Outline Drawing
1
Tel : 82-31-250-5011 rfsales@rfhic.com
All specifications may change without notice. Version 0.3
GaN-SiC Pallet Amplifier
S-Parameter vs. Frequency
RTP26010-S0
WCDMA 4FA Signal @ 2500MHz
WCDMA 4FA Signal @ 2550MHz
WCDMA 4FA Signal @ 2600MHz
WCDMA 4FA Signal @ 2650MHz
WCDMA 4FA Signal @ 2700MHz
RFHIC Corporation (RFHIC) reserves the right to make changes to any products herein or to discontinue any product at any time without notice. RFHIC do not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. The product specifications herein expressed have been carefully checked and are assumed to be reliable. However, RFHIC disclaims liability for inaccuracies and strongly recommends buyers to verify that the information they are using is current before placing purchase orders. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such use. RFHIC's liability under or arising out of damages, claims of whatsoever kind and nature which RFHIC products could cause shall be limited in amount to the net purchase price of the products sold to buyer by RFHIC.
Tel : 82-31-250-5011 rfsales@rfhic.com
All specifications may change without notice. Version 0.3


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